PART |
Description |
Maker |
KM44C258BJ-8 KM44C258BP-8 KM44C258BP-7 KM44C258BZ- |
256K X 4 STATIC COLUMN DRAM, 80 ns, PDSO20 256K X 4 STATIC COLUMN DRAM, 80 ns, PDIP20 256K X 4 STATIC COLUMN DRAM, 70 ns, PDIP20 256K X 4 STATIC COLUMN DRAM, 80 ns, PZIP19
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UPD4217412V-60 UPD4216412V-60 UPD4216412LE-60 UPD4 |
x4 Static Column Mode DRAM x4静态列模式DRAM
|
Advanced Interconnections, Corp.
|
MSM511002A-10ZS |
1M X 1 STATIC COLUMN DRAM, 100 ns, PZIP19
|
OKI ELECTRIC INDUSTRY CO LTD
|
AEPDH1M8LB-85 AEPDS1M8LB-85N AEPDS1M8LB-85P AEPDS1 |
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 24; Temperature Range: 0°C to 70°C Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C x8内存,未定义建筑 x8 DRAM ModuleUndefined Architecture x8内存,未定义建筑 x8 Page Mode DRAM Module x8页面模式内存模块 x8 Static Column Mode DRAM Module x8静态列模式DRAM模块 x8 Nibble Mode DRAM Module x8半字节模式记忆体模组
|
Lin Engineering, Inc. Unisonic Technologies Co., Ltd. Sullins Connector Solutions, Inc. Cypress Semiconductor, Corp.
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GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28 2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode) 5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
MT4C16270 |
DRAM 256K X 16 DRAM 5V / EDO PAGE MODE
|
Micron Technology
|
MT4C4001JECJ-10/883C MT4C4001JECJ-10/IT MT4C4001JE |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
Austin Semiconductor http://
|
IS41C44002-50TI IS41LV44002-50T IS41C44004-50T IS4 |
4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 带扩展数据输出页模式动态RAM(刷新 2K 4米4的DRAM与江户页面模式(3.3伏,4米4带扩展数据输出页模式动态随机存储器(刷k)的 x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
Integrated Silicon Solution, Inc.
|